The electron effective masses for Al0.15Ga0.35In0.5P and Ga0.5In0.5P have been investigated using conventional and optically detected cyclotron resonance. For AlGaInP (partly ordered) it is determined to be m*=(0.14+/-0.01) m0. For disordered GaInP the mass is found to be m*=(0.092+/-0.003) mo and for ordered material (band gap reduction approximately 50 meV) m*=(0.088+/-0.003) mo. The experimentally deduced values are compared with those obtained from five-band k.p calculation.