ORIENTATION OF MGO THIN-FILMS ON SI(100) AND GAAS(100) PREPARED BY ELECTRON-BEAM EVAPORATION

被引：41
|
作者：
MASUDA, A [1 ]
NASHIMOTO, K [1 ]
机构：
[1] FUJI XEROX CO LTD,MAT RES LAB,1600 TAKEMATSU,MINAMIASHIGARA,KANAGAWA 25001,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 6A期
关键词：
MGO THIN FILMS; ELECTRON-BEAM EVAPORATION; SI(100); GAAS(100); ORIENTATION; DEPOSITION RATE; SUBSTRATE TEMPERATURE;
D O I：
10.1143/JJAP.33.L793
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
MgO thin films were prepared on Si(100) and GaAs(100) by electron-beam evaporation. MgO thin films with (100) orientation were obtained at 610-degrees-C with the deposition rate of 0.5 angstrom/s, and those with (111) orientation were obtained below 440-degrees-C with deposition rate higher than 8 angstrom/s, on Si substrates. (100) oriented MgO thin films, however. grew on Si at 440-degrees-C upon decreasing the deposition rate to 0.3 angstrom/s. MgO thin films with (100) orientation having cube-on-cube epitaxy were obtained on GaAs substrates at the temperature as low as 280-degrees-C even at the deposition rate of 1.4 angstrom/s.
引用
收藏
页码：L793 / L796
页数：4
相关论文
共 50 条
  • [1] ERBIUM OXIDE THIN-FILMS ON SI(100) OBTAINED BY LASER-ABLATION AND ELECTRON-BEAM EVAPORATION
    QUERALT, X
    FERRATER, C
    SANCHEZ, F
    AGUIAR, R
    PALAU, J
    VARELA, M
    APPLIED SURFACE SCIENCE, 1995, 86 (1-4) : 95 - 98
  • [2] FABRICATION OF CDTE THIN-FILMS BY ELECTRON-BEAM EVAPORATION
    CAPORALETTI, O
    WESTCOTT, MR
    CANADIAN JOURNAL OF PHYSICS, 1985, 63 (06) : 798 - 800
  • [3] Titanium oxide films on Si(100) deposited by electron-beam evaporation at 250°C
    Jang, HK
    Whangbo, SW
    Kim, HB
    Im, KY
    Lee, YS
    Lyo, IW
    Whang, CN
    Kim, G
    Lee, HS
    Lee, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (03): : 917 - 921
  • [4] EPITAXIAL-GROWTH OF MGO ON (100)GAAS USING ULTRAHIGH-VACUUM ELECTRON-BEAM EVAPORATION
    HUNG, LS
    ZHENG, LR
    BLANTON, TN
    APPLIED PHYSICS LETTERS, 1992, 60 (25) : 3129 - 3131
  • [5] ELECTRON-BEAM FLASH EVAPORATION FOR YBACUO AND BICASRCUO THIN-FILMS
    DAVIS, MF
    WOSIK, JL
    WOLFE, JC
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) : 4903 - 4908
  • [6] PHYSICAL CHARACTERIZATION OF IN2SE3 THIN-FILMS PREPARED BY ELECTRON-BEAM EVAPORATION
    MANNO, D
    MICOCCI, G
    RELLA, R
    SICILIANO, P
    TEPORE, A
    VACUUM, 1995, 46 (8-10) : 997 - 1000
  • [7] A NOVEL ELECTRON-BEAM EVAPORATION TECHNIQUE FOR THE DEPOSITION OF SUPERCONDUCTING THIN-FILMS
    KRISHNA, MG
    MURALIDHAR, GK
    RAO, KN
    RAO, GM
    MOHAN, S
    PHYSICA C, 1991, 175 (5-6): : 623 - 626
  • [8] SUPERCONDUCTING THIN-FILMS OF BISRCACUO MADE BY SEQUENTIAL ELECTRON-BEAM EVAPORATION
    STEINBECK, J
    ANDERSON, AC
    TSAUR, BY
    STRAUSS, AJ
    IEEE TRANSACTIONS ON MAGNETICS, 1989, 25 (02) : 2429 - 2432
  • [9] THIN-FILMS BASED ON POLYMERS WITH CONJUGATED BONDS, PREPARED BY ELECTRON-BEAM EVAPORATION IN VACUUM, AND SOME OF THEIR PROPERTIES
    LUNIN, AF
    PAKHOMOV, LA
    VINOKUROV, VA
    NOVIKOV, VF
    BARYBIN, VN
    MKRTYCHAN, VR
    BUROBIN, AV
    HIGH ENERGY CHEMISTRY, 1978, 12 (04) : 323 - 325
  • [10] Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation
    Landheer, D
    Gupta, JA
    Sproule, GI
    McCaffrey, JP
    Graham, MJ
    Yang, KC
    Lu, ZH
    Lennard, WN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (02) : G29 - G35
12345