PULSED LIGHT-INDUCED TRANSIENT BEHAVIOUR AT n-InP ELECTRODE IN Fe3+/Fe2+ (IV)

In this work, the influence of temperature, wavelength and surface treatment on the transient behavior of n-InP in Fe3+/Fe2+ solution with pulsed light technique is investigated. The wavelength does not influence the time constant of the transient curve. The peak photovoltage decreases when the temperature increases, it is similar to the silicon cell. The decya of photovoltage time curve is rapid with temperature because of increasing of the back diffusion rate. If the electrode is polished by emerg parper, the peak valus drops and the decay of the curve is very rapid, it can be restored by treatment with H2SO4 + H2O2(1:1) etching solution continuosely, this phenomenon can be explained by surface states.