MOSFET-C FILTER WITH LOW EXCESS NOISE AND ACCURATE AUTOMATIC TUNING

被引：18
|
作者：
VANDERPLAS, J
机构：
[1] Department of Electrical Engineering, Delft University of Technology
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1991年 / 26卷 / 07期
关键词：
D O I：
10.1109/4.92011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Continuous-time integrated filters having a maximum dynamic range at the audio-frequency range are obtained using MOSFET-C filters. In combination with a careful design of the applied symmetrical amplifiers in a BiCMOS technology, the detrimental influence of 1/f noise can be minimized. A 98-dB dynamic range (THD < 0.3%) is obtained in a realized fifth-order Butterworth low-pass filter, while the overall 1/f noise corner frequency is limited to 250 Hz. Automatic adjustment of the filter cutoff frequency is performed using a novel all-silicon automatic tuning system that, compared with traditional automatic tuning system, demands reduced overhead circuitry.
引用
收藏
页码：922 / 929
页数：8
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