SEMICONDUCTORS WITH COMPLEX LATTICE AND THE AMORPHIZATION PROBLEM

被引:48
|
作者
GOLIKOVA, OA
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 101卷 / 02期
关键词
D O I
10.1002/pssa.2211010202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:277 / 314
页数:38
相关论文
共 50 条
  • [1] AMORPHIZATION OF SEMICONDUCTORS BY BALL-MILLING
    GAFFET, E
    GASPARD, JP
    JOURNAL DE PHYSIQUE, 1990, 51 (14): : C4205 - C4210
  • [2] SIMULATION OF AMORPHIZATION IN SILICON LATTICE
    KNYZHNIKOV, YN
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (01): : 41 - 44
  • [3] Lattice instability approach to the problem of high-pressure solid-state amorphization
    Brazhkin, VV
    Lyapin, AG
    HIGH PRESSURE RESEARCH, 1996, 15 (01) : 9 - 30
  • [4] The theory of single pulse laser amorphization of semiconductors
    Emel'yanov, VI
    Panin, IM
    ICONO '98: FUNDAMENTAL ASPECTS OF LASER-MATTER INTERACTION AND NEW NONLINEAR OPTICAL MATERIALS AND PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1999, 3734 : 294 - 306
  • [5] ENHANCED DEPTH OF AMORPHIZATION OF SEMICONDUCTORS BY MOLECULAR IMPLANTATION
    HANSEN, DA
    POKER, DB
    APPLETON, BR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 16 (4-5): : 373 - 375
  • [6] Sputtering and amorphization of crystalline semiconductors by Nanodroplet Bombardment
    Grustan-Gutierrez, Enric
    Wei, Chuqi
    Wang, Bingru
    Lanza, Mario
    CRYSTAL RESEARCH AND TECHNOLOGY, 2017, 52 (01)
  • [7] THEORY OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS - AN APPROACH TO RANDOM LATTICE PROBLEM
    MATSUBARA, T
    TOYOZAWA, Y
    PROGRESS OF THEORETICAL PHYSICS, 1961, 26 (05): : 739 - 756
  • [8] A MECHANISM OF AMORPHIZATION-CRYSTALLIZATION PROCESSES IN IRRADIATED SEMICONDUCTORS
    VERNER, IV
    TSUKANOV, VV
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1989, 112 (1-2): : 461 - 466
  • [9] ENHANCED DEPTH OF AMORPHIZATION OF SEMICONDUCTORS BY MOLECULAR IMPLANTATION.
    Hansen, D.A.
    Poker, D.B.
    Appleton, B.R.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B16 (4-5) : 373 - 375
  • [10] Damage evolution and amorphization in semiconductors under ion irradiation
    Wesch, W.
    Wendler, E.
    Schnohr, C. S.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 277 : 58 - 69