INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES

被引：1

作者：

PATRIKAR, RM

LAL, R

VASI, J

机构：

[1] Department of Electrical Engineering, Indian Institute of Technology, Bombay

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 02期

关键词：

D O I：

10.1016/0038-1101(94)00089-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of high-field stressing experiments for dry oxides, pyrogenic oxides, nitrided pyrogenic oxides and reoxidized nitrided pyrogenic oxides are presented in this paper. Pyrogenic oxides show poor high-field properties, but nitridation and reoxidation improves them considerably. In fact, the high-field performance of reoxidized nitrided pyrogenic oxides is even superior to that of dry oxides. Our results indicate that improvement occurs due to inhibition of hydrogen drift.

引用

页码：477 / 480

页数：4

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