POINT-DEFECT INDUCED SPE GROWTH OF NI IMPLANTED SILICON

被引：1
|
作者：
VYATKIN, AF
KUZNETSOV, AY
机构：
[1] Institute of Microelectronics Technology, the Russian Academy of Sciences, 142432 Moscow District Chernogolovka,
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期
关键词：
D O I：
10.1016/0168-583X(94)00498-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In the present paper the solid phase epitaxial (SPE) growth and silicidation in Ni-implanted silicon have been studied. The dependences observed have been explained in terms of the phenomenological model of the SPE growth and proposed mechanism of the point defect emission during the silicide formation. It is shown that the flux of interstitial type point defects onto the amorphous-crystalline interface enhances the rate of the SPE growth.
引用
收藏
页码：271 / 275
页数：5
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