ELECTROOPTIC PROPERTIES OF REVERSE-BIASED GAAS EPITAXIAL THIN-FILMS AT 10.6 MU-M

被引：16

作者：

CHEO, PK ^{[1
]}

机构：

[1] UNITED AIRCRAFT CORP,RES LABS,E HARTFORD,CT 06108

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 08期

关键词：

D O I：

10.1063/1.1654950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：439 / 441

页数：3

共 50 条

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[9] HIGH-SPEED PHOTORESPONSE IN A REVERSE-BIASED INGAAS/INP LASER STRUCTURE AT 1.54 MU-M - EXPERIMENT AND MODELING
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