AN INSITU ELLIPSOMETRIC STUDY OF AQUEOUS NH4OH TREATMENT OF SILICON

被引：23
|
作者：
GOULD, G
IRENE, EA
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 04期
关键词：
D O I：
10.1149/1.2096794
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1108 / 1112
页数：5
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