TAMM STATES IN INTERNAL SUPERLATTICE SURFACES

被引：3
|
作者：
SY, HK
CHUA, TC
机构：
来源：
PHYSICA B | 1994年 / 194卷
关键词：
D O I：
10.1016/0921-4526(94)90980-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We consider a model of finite semiconductor superlattice with embedded well(s) of arbitrary width adjacent to internal potential barrier(s) of arbitrary height. Using envelope-function-approximation and solving recurrence relations, the explicit equation giving the electronic state energies is obtained. Numerical results are shown for finite GaAs/AL(x)Ga1-xAs superlattices with identical double embedded wells.
引用
收藏
页码：1301 / 1302
页数：2
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