DOUBLE INP INGAASP (LAMBDA=1.3-MU) HETEROSTRUCTURES WITH AN EXTERNAL LUMINESCENCE QUANTUM EFFICIENCY OF - 40-PERCENT(300-DEGREES-K)

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作者：

AGAEV, VV

GARBUZOV, DZ

GORELENOK, AT

MDIVANI, VN

CHALYI, VP

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 11期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1326 / 1328

页数：3

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[1] PROFILE OF THE EDGE LUMINESCENCE BAND OF INGAASP/INP DOUBLE HETEROSTRUCTURES (LAMBDA=1.3-MU) AT LOW AND HIGH PHOTOEXCITATION RATES
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[3] INFLUENCE OF THE LUMINESCENCE SATURATION EFFECT ON THE LASING THRESHOLD OF INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS (LAMBDA=1.3-MU) AT T GREATER-THAN-OR-EQUAL-TO 300-K
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[4] SPECIAL FEATURES OF THE THRESHOLD CHARACTERISTICS OF SEPARATELY CONFINED INGAASP/INP DOUBLE-HETEROSTRUCTURE LASERS (LAMBDA-=1.3-MU) WITH ULTRATHIN ACTIVE REGIONS
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[5] AUGER RECOMBINATION AND HEATING OF CARRIERS AT HIGH-RATES OF PHOTOEXCITATION OF INGAASP/INP (LAMBDA=1.3 MU-M) AND INGAASP/GAAS (LAMBDA=0.85 MU-M) QUANTUM-WELL HETEROSTRUCTURES
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[6] CHARACTERISTIC FEATURES OF THE TEMPERATURE DEPENDENCES OF THE THRESHOLD OF SEPARATE-CONFINEMENT INGAASP/INP DOUBLE-HETEROSTRUCTURE LASERS (LAMBDA-=1.3-MU) WITH THIN ACTIVE REGIONS
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[7] LUMINESCENCE AND THRESHOLD CHARACTERISTICS OF OPTICALLY-EXCITED INGAASP/INP DOUBLE HETEROSTRUCTURES (0.94-LESS-THAN-LAMBDA-LESS-THAN-1.51-MU)
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[8] CONTINUOUS INGAASP/INP RO DGS LASER WITH 17-PERCENT (LAMBDA=1.32 MU-M, T=290-K) EFFICIENCY
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[10] INJECTION SEPARATE-CONFINEMENT INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS WITH A THRESHOLD 300 A/CM2 (SAMPLES CLEAVED ALONG 4 SIDES, LAMBDA=1.25-MU, T=300-K)
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