REACTION-RATES FOR PT ON GAAS

被引:50
作者
COLEMAN, DJ [1 ]
WISSEMAN, WR [1 ]
SHAW, DW [1 ]
机构
[1] TEXAS INSTR INC,DALLAS,TX 75222
关键词
D O I
10.1063/1.1655214
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:355 / 357
页数:3
相关论文
共 6 条
[1]  
BAXANDALL PJ, 1971, J PHYS E, V4, P23
[2]  
MCFINN HY, 1973, PREPARATION PROPERTI
[3]   SOLID-SOLID REACTIONS IN PT-SI SYSTEMS [J].
MUTA, H ;
SHINODA, D .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2913-+
[4]   THEORETICAL AND EXPERIMENTAL STUDY OF GAAS IMPATT OSCILLATOR EFFICIENCY [J].
SALMER, G ;
PRIBETICH, J ;
FARRAYRE, A ;
KRAMER, B .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :314-324
[5]   EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J].
SINHA, AK ;
POATE, JM .
APPLIED PHYSICS LETTERS, 1973, 23 (12) :666-668
[6]  
WISSEMAN WR, TO BE PUBLISHED