OXIDE AND INTERFACE PROPERTIES OF ANODIC OXIDE MOS STRUCTURES ON III-V COMPOUND SEMICONDUCTORS

被引：47

|

作者：

WEIMANN, G

机构：

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 1-2期

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D O I：

10.1016/0040-6090(79)90062-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：173 / 182

页数：10

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