IMPROVEMENT OF NDRO CHARACTERISTICS OF FINE-STRIPED MAGNETIC THIN-FILM MEMORY ELEMENT

被引：0
|
作者：
YAMANAKA, K [1 ]
ARAKAWA, U [1 ]
TAKAHASHI, S [1 ]
AMAGAI, Y [1 ]
HONMA, S [1 ]
SHIMIZU, K [1 ]
KASAHARA, K [1 ]
机构：
[1] TOKO INC, MEMORY DIV, TOKYO, JAPAN
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1972年 / MAG8卷 / 03期
关键词：
MAGNETIC MATERIALS - Thin Films;
D O I：
10.1109/TMAG.1972.1067352
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Paper reports the improvements of the NDRO characteristics in the FSM element achieved with combined application of multilayer film technologyand topography control, and an improved process in forming the closed flux path structure. Abstract of Paper 42. 2, presented at the 1972 INTERMAG Conference, Kyoto, Japan, April 10-13.
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页码：599 / +
页数：1
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