MAGNETOTRANSISTORS SENSITIVE TO A MAGNETIC-FIELD APPLIED IN 2 DIFFERENT DIRECTIONS

被引：0
|
作者：
DOAN, M [1 ]
RISTIC, L [1 ]
机构：
[1] UNIV ALBERTA,ALBERTA MICROELECTR CTR,EDMONTON T6G 2G7,ALBERTA,CANADA
来源：
CANADIAN JOURNAL OF PHYSICS | 1991年 / 69卷 / 3-4期
关键词：
D O I：
10.1139/p91-026
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A lateral magnetotransistor that is sensitive to a magnetic field applied either parallel or perpendicular to the chip's surface is reported. It is fabricated using the standard complementary metal oxide semiconductor process. The deflection of the carriers in the base region is considered as the basic principle of operation. The device shows a linear response to a magnetic field in both directions. The minimum magnetic induction to be detected is in the order of 10-mu-T at f = 1 kHz.
引用
收藏
页码：170 / 173
页数：4
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