EFFECT OF AN INTENSE MICROWAVE FIELD ON THE CURRENT-VOLTAGE CHARACTERISTIC OF A P-N-JUNCTION WITH HOT CARRIERS

The current flow across a p-n junction is examined theoretically. Carrier recombination in the space-charge region in an intense microwave field is taken into account. The recombination of electrons and holes at impurity centers in the space-charge region is taken into account in the derivation of an expression for the current-voltage characteristic. The voltage interval in which the recombination current is higher than the diffusion current of hot carriers is determined. In an intense microwave field, the recombination current may be higher than the diffusion current even at negative voltages.