DOSE-RATE EFFECT IN GEXSE1-X GLASSES

被引：1
|
作者：
ANDREEV, BV
KOSTRUBOV, YN
GROMOV, VV
机构：
[1] Institute of Physical Chemistry, the Academy of Sciences, the USSR, Moscow, 117915
来源：
PHYSICS LETTERS A | 1991年 / 152卷 / 5-6期
关键词：
D O I：
10.1016/0375-9601(91)90108-K
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A dose-rate effect in chalcogenide glassy semiconductors (ChGS) predicted earlier by Andreev et al. has been experimentally investigated in the Ge-Se system. The effect consists in the fact that the concentration of radiation-induced paramagnetic centres (RPC) depends strongly on the dose rate of weakly absorbed gamma-irradiation, other conditions being equal. The effect's composition dependence obtained from the experiment has been also discussed.
引用
收藏
页码：293 / 296
页数：4
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