EFFECTS OF GROWN-IN AND PROCESS INDUCED DEFECTS ON NUCLEATION OF STACKING FAULTS IN SILICON EPITAXIAL LAYERS

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POMERANTZ, D

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 03期

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O646 [电化学、电解、磁化学];

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081704 ;

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页码：C96 / +

页数：1

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