HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE

被引：136

作者：

DONOVAN, TM

HEINEMAN.K

机构：

来源：

PHYSICAL REVIEW LETTERS | 1971年 / 27卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.27.1794

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1794 / &

共 11 条

[1]

BAUER RS, 1971, 4 P INT C AM LIQ SEM

[2]

BAUER RW, TO BE PUBLISHED

[3] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[4] STRUCTURAL, ELECTRICAL, AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM FILMS [J].

CHOPRA, KL ;

BAHL, SK .

PHYSICAL REVIEW B, 1970, 1 (06) :2545-&

[5] OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM FILMS [J].

DONOVAN, TM ;

SPICER, WE ;

BENNETT, JM ;

ASHLEY, EJ .

PHYSICAL REVIEW B, 1970, 2 (02) :397-&

[6] A HIGH DENSITY FORM OF AMORPHOUS GE [J].

DONOVAN, TM ;

ASHLEY, EJ ;

SPICER, WE .

PHYSICS LETTERS A, 1970, A 32 (02) :85-&

[7]

Fritzsche H., 1971, Journal of Non-Crystalline Solids, V6, P49, DOI 10.1016/0022-3093(71)90015-9

[8] OPTICAL EVIDENCE FOR A NETWORK OF CRACKLIKE VOIDS IN AMORPHOUS GERMANIUM [J].

GALEENER, FL .

PHYSICAL REVIEW LETTERS, 1971, 27 (25) :1716-&

[9] SUBMICROSCOPIC-VOID RESONANCE - EFFECT OF INTERNAL ROUGHNESS ON OPTICAL ABSORPTION [J].

GALEENER, FL .

PHYSICAL REVIEW LETTERS, 1971, 27 (07) :421-&

[10] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J].

MOSS, SC ;

GRACZYK, JF .

PHYSICAL REVIEW LETTERS, 1969, 23 (20) :1167-&

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