PERFORMANCE OF ALGAAS/INGAAS PSEUDOMORPHIC MODFETS AT CRYOGENIC TEMPERATURES

被引：0
|
作者：
HENDERSON, T [1 ]
KETTERSON, A [1 ]
MORKOC, H [1 ]
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C428 / C428
页数：1
相关论文
共 50 条
  • [1] FREQUENCY-RESPONSE OF SUBMICROMETER PSEUDOMORPHIC ALGAAS INGAAS GAAS MODFETS AT CRYOGENIC TEMPERATURES
    LASKAR, J
    KOLODZEY, J
    KETTERSON, A
    CARACCI, S
    ADESIDA, I
    CRYOGENICS, 1990, 30 (12) : 1134 - 1139
  • [2] CRYOGENIC OPERATION OF PSEUDOMORPHIC ALGAAS/INGAAS SINGLE-QUANTUM-WELL MODFETS
    MASSELINK, WT
    KETTERSON, A
    KLEM, J
    KOPP, W
    MORKOC, H
    ELECTRONICS LETTERS, 1985, 21 (20) : 937 - 939
  • [3] PULSE-DOPED ALGAAS/INGAAS PSEUDOMORPHIC MODFETS
    MOLL, N
    FISCHERCOLBRIE, A
    HUESCHEN, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2357 - 2358
  • [4] PULSE-DOPED ALGAAS INGAAS PSEUDOMORPHIC MODFETS
    MOLL, N
    HUESCHEN, MR
    FISCHERCOLBRIE, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 879 - 886
  • [5] CHARACTERIZATION OF ULTRA-HIGH-SPEED PSEUDOMORPHIC ALGAAS/INGAAS (ON GAAS) MODFETS
    NGUYEN, LD
    TASKER, PJ
    RADULESCU, DC
    EASTMAN, LF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2243 - 2248
  • [6] MOVPE GROWN HIGH-PERFORMANCE 0.25 MU-M ALGAAS/INGAAS/GAAS PSEUDOMORPHIC MODFETS
    THOMPSON, AG
    LEVY, HM
    MAO, BY
    MARTIN, G
    LEE, GY
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 921 - 925
  • [7] PSEUDOMORPHIC ALGAAS/INGAAS SQW-MODFETS WITH DOUBLE-SIDED MODULATION DOPING
    PLAUTH, J
    KEMPTER, R
    GRIGULL, S
    HEISS, H
    WALTHER, M
    KLEIN, W
    TRANKLE, G
    WEIMANN, G
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 53 - 58
  • [8] CRYOGENIC BEHAVIOR OF ULTRASHORT GATE ALGAAS/GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HEMTS
    CROZAT, P
    BOUCHON, D
    DELUSTRAC, A
    ANIEL, F
    JIN, Y
    ADDE, R
    VERNET, G
    JIN, Y
    ETIENNE, B
    LAUNOIS, H
    VANHOVE, M
    DERAEDT, W
    VANROSSUM, M
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 861 - 864
  • [9] NUMERICAL-ANALYSIS OF NONEQUILIBRIUM ELECTRON-TRANSPORT IN ALGAAS/INGAAS/GAAS PSEUDOMORPHIC MODFETS
    WANG, TH
    HSIEH, CH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (09) : 1930 - 1938
  • [10] A COMPARATIVE-STUDY OF WET AND DRY SELECTIVE ETCHING PROCESSES FOR GAAS ALGAAS INGAAS PSEUDOMORPHIC MODFETS
    TONG, M
    BALLEGEER, DG
    KETTERSON, A
    ROAN, EJ
    CHENG, KY
    ADESIDA, I
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (01) : 9 - 15
12345