RTP SHALLOW JUNCTION FORMATION OF LOW-ENERGY BORON IMPLANTS INTO PREAMORPHIZED SILICON

被引：7
|
作者：
BASRA, VK
DOWNEY, DF
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期
关键词：
D O I：
10.1016/0168-583X(87)90891-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：505 / 508
页数：4
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