Sn submonolayer-mediated Ge heteroepitaxy on Si(001)

被引：29
|
作者：
Lin, XW [1 ]
LilientalWeber, Z [1 ]
Washburn, J [1 ]
Weber, ER [1 ]
Sasaki, A [1 ]
Wakahara, A [1 ]
Hasegawa, T [1 ]
机构：
[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.52.16581
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of a Sn submonolayer on the growth mode of Ge on Si(001) during molecular-beam epitaxy has been studied by transmission-electron microscopy and reflection high-energy electron diffraction. It was found that Sn-mediated growth promotes Ge island formation, suggesting that Sn acts to enhance the surface mobility of Ge adatoms. It is pointed out that being able to uniformly cover and strongly segregate to the growing surface is necessary, but not sufficient, for a surfactant to effectively suppress Ge islanding on Si.
引用
收藏
页码：16581 / 16587
页数：7
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