DEPOSITION OF BORON-NITRIDE FILMS BY NITROGEN SPUTTERING FROM A BORON-METAL TARGET

This contribution deals with reactive growth of boron-nitride films by a rf nitrogen-sputtering process from a boron-metal target; thus nitrogen is functioning both as sputter and reactive gas. Only few and superficial reports of reactive sputter depositions from a metallic boron target in various argon/nitrogen mixtures exist, compared to the number of reports on rf sputtering from a BN target. Nitrogen sputtering of boron-metal has previously not been reported. It was shown by Fourier-transform infrared (FTIR) spectroscopy that the hexagonal structure of BN exclusively was deposited. Sputter rates were measured and showed no dependence on the reactive-gas flow and only a marginal dependence on sputter-gas mixtures containing 20% of krypton, argon, or helium. The reported nitrogen-sputtering process appears to be appropriate for exploration of the key parameters for phase control in BN growth and for additional surface engineering processes such as substrate bias and post-ion bombardment.© 1995 American Institute of Physics.