ANNEALING OF IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES USING AN INCOHERENT-LIGHT SOURCE

被引：8
|
作者：
POWELL, RA
FULKS, RT
KAMINS, TI
机构：
[1] EXTRION DIV,GLOUCESTER,MA 01930
[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 01期
关键词：
D O I：
10.1116/1.571305
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：33 / 36
页数：4
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