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CHANNELING ANALYSIS OF STACKING DEFECTS IN EPITAXIAL SI LAYERS
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CHU W, UNPUB
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ELECTRONIC-STRUCTURE OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES - APPLICATION TO INAS-GASB(110)
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SPECTROSCOPIC ANALYSIS OF COHESIVE ENERGIES AND HEATS OF FORMATION OF TETRAHEDRALLY COORDINATED SEMICONDUCTORS
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PHYSICAL REVIEW B,
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ABOUT DECHANNELING DUE TO DISLOCATION LOOPS
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RADIATION EFFECTS AND DEFECTS IN SOLIDS,
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