A TEM AND SIMS STUDY OF TI/PD/AU OHMIC CONTACTS TO P-TYPE GAAS-LAYERS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0
|
作者：
HENRY, BM [1 ]
STATONBEVAN, AE [1 ]
CROUCH, MA [1 ]
GILL, SS [1 ]
机构：
[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 117期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Ti/Pd/Au and Pd/Ti/Au multilayer systems were used to form ohmic contacts on thin p+-GaAs layers. The alloying behaviour of contacts, annealed at 380-degrees-C for 4 minutes, was studied using TEM and SIMS. The Ti/Pd/Au (75/75/400nm) contact exhibits the most promising microstructure with depth penetration into the epilayer of the order of a few tens of nms. However the contact resistance (2.88-OMEGA-mm) requires improvement. Interchanging the Ti and Pd layers is found to improve the contact resistance (0.24-OMEGA-mm) but results in extensive (0.1-mu-m) Pd indiffusion into the epilayer.
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页码：265 / 268
页数：4
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