THERMODYNAMICAL ANALYSIS OF OPTIMAL RECOMBINATION CENTERS IN THYRISTORS

被引：115

作者：

ENGSTROM, O

ALM, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 11-1期

关键词：

D O I：

10.1016/0038-1101(78)90243-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1571 / 1576

页数：6

共 19 条

[1]

BALIGA BJ, 1977, SOLID STATE ELECTRON, V20, P225, DOI 10.1016/0038-1101(77)90188-5

[2] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J].

BEMSKI, G .

PHYSICAL REVIEW, 1958, 111 (06) :1515-1518

[3] OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON [J].

BRAUN, S ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2658-2665

[4]

CHOO SC, 1970, PHYS REV B, V2, P687

[5] ANALYSIS AND MEASUREMENT OF CARRIER LIFETIMES IN VARIOUS OPERATING MODES OF POWER DEVICES [J].

CORNU, J ;

SITTIG, R ;

ZIMMERMANN, W .

SOLID-STATE ELECTRONICS, 1974, 17 (10) :1099-1106

[6] LIFETIMES AND CAPTURE CROSS SECTIONS IN GOLD-DOPED SILICON [J].

DAVIS, WD .

PHYSICAL REVIEW, 1959, 114 (04) :1006-1008

[7] GOLD AS AN OPTIMAL RECOMBINATION CENTER FOR POWER RECTIFIERS AND THYRISTORS [J].

DUDECK, I ;

KASSING, R .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :1033-1036

[8] TEMPERATURE DEPENDENT ENERGY LEVELS IN STATISTICAL MECHANICS [J].

ELCOCK, EW ;

LANDSBERG, PT .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (02) :161-168

[9] TEMPERATURE-DEPENDENCE OF GOLD ACCEPTOR ENERGY-LEVEL IN SILICON [J].

ENGSTROM, O ;

GRIMMEISS, HG .

APPLIED PHYSICS LETTERS, 1974, 25 (07) :413-415

[10] THERMAL ACTIVATION-ENERGY OF GOLD-ACCEPTOR LEVEL IN SILICON [J].

ENGSTROM, O ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :831-837

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