1ST-PRINCIPLES CALCULATIONS OF MULTIPLET STRUCTURES OF TRANSITION-METAL DEEP IMPURITIES IN II-VI AND III-V SEMICONDUCTORS

被引：53
|
作者：
WATANABE, S
KAMIMURA, H
机构：
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 3卷 / 03期
关键词：
D O I：
10.1016/0921-5107(89)90027-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：313 / 324
页数：12
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