ULTRAFAST TRANSIENT ABSORPTION MEASUREMENT OF THE ELECTRON-LO PHONON-SCATTERING TIME IN GAAS-AL0.33GA0.67AS MULTIPLE-QUANTUM WELLS

被引：8
|
作者：
COLLINGS, D
SCHUMACHER, KL
RAKSI, F
HUGHES, HP
PHILLIPS, RT
机构：
[1] Cavendish Laboratory, Cambridge CB3 0HE, Madingley Road
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 07期
关键词：
D O I：
10.1063/1.110986
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electron-LO phonon scattering time in GaAs-Al0.33Ga0.67As quantum wells is determined to be 200+/-50 fs using transient absorption with low excitation density, a more direct method than previous measurement techniques.
引用
收藏
页码：889 / 891
页数：3
相关论文
共 12 条
  • [1] Electron-LO phonon scattering in Ga1-xInxNyAs1-y/GaAs quantum well
    Chen Qian
    Wang Hai-Long
    Wang Hui
    Gong Qian
    Song Zhi-Tang
    ACTA PHYSICA SINICA, 2013, 62 (22)
  • [2] The investigation of plasmon-longitudinal optical phonon coupling and surface polariton modes in donor doped GaAs-Al0.33Ga0.67As multi quantum wells
    Shayesteh, SF
    Hidari, K
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 2002, 23 (10): : 1455 - 1464
  • [3] The Investigation of Plasmon-Longitudinal Optical Phonon Coupling and Surface Polariton Modes in Donor Doped GaAs-Al0.33Ga0.67As Multi Quantum Wells
    S. Farjami Shayesteh
    K. Hidari
    International Journal of Infrared and Millimeter Waves, 2002, 23 : 1455 - 1464
  • [4] Ultrafast optical absorption measurements of electron-phonon scattering in GaAs quantum wells
    Turner, K
    Rota, L
    Taylor, RA
    Ryan, JF
    HOT CARRIERS IN SEMICONDUCTORS, 1996, : 23 - 26
  • [5] ELECTRON-CONFINED LO PHONON-SCATTERING RATES IN GAAS/ALAS QUANTUM-WELLS IN THE PRESENCE OF A QUANTIZING MAGNETIC-FIELD
    BHAT, JS
    MULIMANI, BG
    KUBAKADDI, SS
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (08) : 1571 - 1574
  • [6] A 2-DIMENSIONAL HOT-ELECTRON ELECTROOPTIC EFFECT IN GAAS/(AL,GA)AS MULTIPLE-QUANTUM WELLS
    TOWE, E
    SUN, D
    VOROBJEV, LE
    DANILOV, SN
    FIRSOV, DA
    ZIBIK, EA
    SUPERLATTICES AND MICROSTRUCTURES, 1995, 17 (02) : 129 - 133
  • [7] ABSORPTION MODULATION INDUCED BY ELECTRON-BEAM EXCITATION OF STRAINED IN0.2GA0.8AS/GAAS MULTIPLE-QUANTUM WELLS
    RICH, DH
    RAMMOHAN, K
    TANG, Y
    LIN, HT
    MASERJIAN, J
    GRUNTHANER, FJ
    LARSSON, A
    BORENSTAIN, SI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1717 - 1722
  • [8] ELECTRON-BEAM-INDUCED ABSORPTION MODULATION IMAGING OF STRAINED IN0.2GA0.8AS/GAAS MULTIPLE-QUANTUM WELLS
    RICH, DH
    RAMMOHAN, K
    TANG, Y
    LIN, HT
    MASERJIAN, J
    GRUNTHANER, FJ
    LARSSON, A
    BORENSTAIN, SI
    APPLIED PHYSICS LETTERS, 1993, 63 (03) : 394 - 396
  • [9] TIME-RESOLVED RAMAN-SCATTERING MEASUREMENT OF ELECTRON-OPTICAL PHONON INTERSUBBAND RELAXATION IN GAAS QUANTUM WELLS
    TATHAM, MC
    RYAN, JF
    FOXON, CT
    SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1497 - 1501
  • [10] TIME-RESOLVED RAMAN-SCATTERING MEASUREMENT OF ELECTRON-OPTICAL PHONON INTERSUBBAND RELAXATION IN GAAS QUANTUM-WELLS
    TATHAM, MC
    RYAN, JF
    FOXON, CT
    SURFACE SCIENCE, 1990, 228 (1-3) : 127 - 130
12