EXTENDED (1.1-2.9 EV) HOT-CARRIER-INDUCED PHOTON-EMISSION IN N-CHANNEL SI MOSFETS

被引：35
|
作者：
LANZONI, M
SANGIORGI, E
FIEGNA, C
MANFREDI, M
RICCO, B
机构：
[1] UNIV UDINE,DEPT PHYS,I-33100 UDINE,ITALY
[2] UNIV PARMA,DEPT PHYS,I-43100 PARMA,ITALY
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期
关键词：
D O I：
10.1109/55.82081
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we present an extended set of experimental data obtained analyzing the spectrum of the light emitted by n-MOSFET's operating at different biases and temperatures. The analysis has been performed in a wide energy range (1.07-2.88 eV) at different device biases and temperatures obtaining significant information for the interpretation of photon emission mechanisms. The results suggest that the low- and high-energy parts of the photon distribution may be dominated by different emission mechanisms: electron-hole recombination and Bremstrahlung of hot electrons, respectively. This tentative interpretation is confirmed by the comparison between the measured photon energy distribution (PED) and the calculated electron energy distribution (EED) in the device obtained by Monte Carlo (MC) simulations. This comparison leads to the important observation that the high-energy tail of the photon distribution does reproduce the main features of the hot-electron tail.
引用
收藏
页码：341 / 343
页数：3
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