ELECTRICAL CHARACTERIZATION OF MOS DEVICES

被引：0

作者：

MORFOULI, P ^{[1
]}

BRINI, J ^{[1
]}

GUILLEMOT, N ^{[1
]}

SAIDBOUSSEY, J ^{[1
]}

机构：

[1] INST NATL POLYTECH GRENOBLE,CIME,F-38031 GRENOBLE,FRANCE

来源：

ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS | 1991年 / 46卷 / 9-10期

关键词：

CHARACTERIZATION; MOS CAPACITOR; MOS TRANSISTOR;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

We present a set of practical manipulations for MOS component characterisation, which is included in a cycle of practical teaching of microelectronics technology. Hardware include a computer controling impedance analyser and a picoamperemeter. The software we present enable the complete characterization of a technological chip which has been specially conceived for educational purpose. The parameter extraction procedure includes : exhaustive analysis of C-V curves (high frequency and quasi static), doping profile obtained from C-V analysis, Zerbst analysis, and analysis of I(d)(V(g), V(d)) characteristics of MOS transistors, with extraction of the following parameters : threshold voltage, mobility and mobility reduction factor, sub-threshold swing, series resistance, electrical length and width.

引用

页码：486 / 489

页数：4

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