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- [2] PASSING SPECTRA OF GALLIUM ARSENIDE IRRADIATED BY PROTONS POSESSING ENERGY OF -5 MEV IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1969, (05): : 120 - +
- [3] ABSORPTION-SPECTRA OF DEFORMED AND ELECTRON-IRRADIATED GALLIUM-ARSENIDE CRYSTALS IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1987, 51 (04): : 698 - 702
- [4] ORIENTATIONAL DEPENDENCE OF DEFECT FORMATION IN N-TYPE GALLIUM-ARSENIDE IRRADIATED WITH 30 MEV PROTONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1144 - 1146
- [5] MEV IMPLANTATION OF GALLIUM-ARSENIDE ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 185 - 190
- [6] INFLUENCE OF MECHANICAL STRESSES ON EXCITON AND MAGNETO-OPTIC ABSORPTION-SPECTRA OF GALLIUM-ARSENIDE CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1476 - 1479
- [7] INFRARED-ABSORPTION IN GALLIUM-ARSENIDE IRRADIATED AT 77 K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 567 - 568
- [8] IR ABSORPTION IN SEMIINSULATING GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (12): : 1342 - 1344
- [9] INFRARED-ABSORPTION SPECTRA OF OXYGEN-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 590 - 591