CHLORINE REACTIVE ION-BEAM ETCHING OF INSB AND INAS0.15SB0.85/INSB STRAINED-LAYER SUPERLATTICES

被引：15
|
作者：
VAWTER, GA
WENDT, JR
机构：
[1] Sandia National Laboratories, Albuquerque
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期
关键词：
D O I：
10.1063/1.104664
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first successful application of Cl2 reactive ion beam etching (RIBE) to the dry etching of bulk InSb and InAs0.15Sb0.85/InSb strained-layer superlattices (SLSs). Etching was performed in a load-locked ultrahigh vacuum chamber using an electron cyclotron resonance ion source. Etching rates for InSb and InAs0.15Sb0.85/InSb SLS with a 500 eV Cl2 beam at 0.6 mA/cm2 are 280 and 240 nm/min, respectively, compared to 310 nm/min for GaAs. The sputter yield for Cl2 RIBE in this antimonide system is double that obtained by Ar ion milling under identical conditions.
引用
收藏
页码：289 / 291
页数：3
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