VIBRATIONS OF ATOMS OF 111-V COMPOUNDS - CASE OF GALLIUM-PHOSPHIDE

被引：7

作者：

PEPE, G

MASRI, P

BIENFAIT, M

DOBRZYNS.L

机构：

[1] CTR ST JEROME,LAB CROISS CRISTALLINE,13013 MARSEILLE,FRANCE

[2] CTR LUMINY,LAB CROISS CRISTALLINE,13288 MARSEILLE,FRANCE

[3] INST LAUE LANGEVIN,BOP 156,38042 GRENOBLE,FRANCE

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1974年 / A 30卷 / MAR期

关键词：

D O I：

10.1107/S0567739474000593

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：290 / 293

页数：4

共 11 条

[1] LOCAL VIBRATIONS OF BERYLLIUM IN GALLIUM-PHOSPHIDE
BERNDT, V
KOPYLOV, AA
PIKHTIN, AN
FIZIKA TVERDOGO TELA, 1975, 17 (09): : 2812 - 2814
[2] GAP VIBRATIONS AND POSSIBILITY OF ANTIMONY AND BISMUTH DETECTION IN GALLIUM-PHOSPHIDE
BERNDT, V
KOPYLOV, AA
KUZNETSOV, VV
FIZIKA TVERDOGO TELA, 1978, 20 (11): : 3418 - 3420
[3] OPTICAL-ABSORPTION BY LATTICE-VIBRATIONS AND LOCALIZED VIBRATIONS OF BORON IN GALLIUM-PHOSPHIDE
ZAKRZHEV.VI
YASKOV, DA
PIKHTIN, AN
SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (09): : 2210 - +
[4] REVEALING OF LATTICE-DEFECTS ON (111) FACES OF GALLIUM-PHOSPHIDE AND INDIUM-PHOSPHIDE BY CHEMICAL ETCHING
WAGNER, G
GOTTSCHALCH, V
CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (01) : 59 - 67
[5] AN X-RAY-ANALYSIS OF ANOMALOUS DISPERSION EFFECTS, ANHARMONICITY AND THERMAL VIBRATIONS IN GALLIUM-PHOSPHIDE
MOHANLAL, SK
PADIYAN, DP
ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1986, 177 (3-4): : 177 - 184
[6] INITIAL GROWTH AND DEFECT STRUCTURE OF GALLIUM-PHOSPHIDE LAYERS DEPOSITED ON (111)-ORIENTED GAAS SUBSTRATES
WAGNER, G
KUHN, G
JOURNAL OF MATERIALS SCIENCE LETTERS, 1982, 1 (02) : 45 - 48
[7] FORMATION OF CLUSTER IONS OF PHOSPHORUS ATOMS IN PULSED-LASER STIMULATED FIELD EVAPORATION OF GALLIUM-PHOSPHIDE
TOMITA, M
KURODA, T
SURFACE SCIENCE, 1988, 201 (1-2) : 385 - 391
[8] VARIATION IN THE YIELD OF PHOTO-ELECTRONS EMITTED FROM (111) AND (111) SURFACES OF A GALLIUM-PHOSPHIDE CRYSTAL WITH THE DIFFRACTION CONDITION OF X-RAYS
TAKAHASHI, T
KIKUTA, S
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (02) : 620 - 624
[9] CALCULATION OF VIBRATIONS OF VOLUME ATOMS AND (110) SURFACE ATOMS OF III-V COMPOUNDS .5. APPLICATION TO GALLIUM-ARSENIDE
MASRI, P
SURFACE SCIENCE, 1973, 39 (01) : 51 - 60
[10] III/V PRECURSORS WITH P-H OR AS-H BONDS - A LOW-TEMPERATURE ROUTE TO GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE
COWLEY, AH
HARRIS, PR
JONES, RA
NUNN, CM
ORGANOMETALLICS, 1991, 10 (03) : 652 - 656

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