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- [1] SIMULATION OF RETARDED DIFFUSION OF ANTIMONY AND ENHANCED DIFFUSION OF PHOSPHORUS IN SILICON ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1987, 67 (04): : 415 - 420
- [2] Fraction of interstitialcy component of phosphorus and antimony diffusion in silicon JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B): : 1184 - 1187
- [3] STIMULATION OF THE DIFFUSION OF PHOSPHORUS AND ANTIMONY IN SILICON BY BOMBARDMENT WITH OXYGEN IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 584 - 585
- [5] Analysis of simultaneous boron and phosphorus diffusion gettering in silicon PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (11): : 2589 - 2592
- [7] STIMULATION OF THE DIFFUSION OF PHOSPHORUS AND ANTIMONY IN SILICON BY BOMBARDMENT WITH OXYGEN IONS. 1982, V 16 (N 5): : 584 - 585
- [9] DIFFUSION OF ANTIMONY, PHOSPHORUS, AND BORON IN SILICON WITH VARIOUS SURFACE CONCENTRATIONS OF DIFFUSANT SOVIET PHYSICS SOLID STATE,USSR, 1970, 12 (05): : 1181 - &
- [10] THE EFFECT OF PHOSPHORUS BACKGROUND CONCENTRATION ON THE DIFFUSION OF TIN, ARSENIC AND ANTIMONY IN SILICON MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 107 - 112