STARK SHIFT AND FIELD-INDUCED TUNNELING IN ALXGA1-XAS GAAS QUANTUM-WELL STRUCTURES

被引:66
|
作者
JUANG, C
KUHN, KJ
DARLING, RB
机构
[1] Department of Electrical Engineering (FT-10), University of Washington, Seattle
关键词
D O I
10.1103/PhysRevB.41.12047
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Within the framework of the effective-mass approximation, a method is developed using the time-dependent and the time-independent Schrödinger equations to describe electron behavior in quantum wells in both low- and high-field regions. In low-field regions, the energy states are determined by the time-independent Schrödinger equation, which is applicable if the electron is confined. In high-field regions, field-induced tunneling occurs and the tunneling of the particles must be described by the time-dependent Schrödinger operator because of the lack of energy eigenstates. This method improves upon the time-independent analysis of other works which do not adequately describe the high-electric-field regions. © 1990 The American Physical Society.
引用
收藏
页码:12047 / 12053
页数:7
相关论文
共 50 条
  • [1] RECOMBINATION DYNAMICS IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES
    FOUQUET, JE
    BURNHAM, RD
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1799 - 1810
  • [2] TUNNELING DARK CURRENT IN GAAS/ALXGA1-XAS QUANTUM-WELL DETECTORS
    NATHAN, V
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 144 (01): : K37 - K40
  • [3] Quantum confined stark effect and optical absorption in AlxGa1-xAs/GaAs/AlxGa1-xAs single quantum well
    Panda, S
    Panda, BK
    Fung, S
    Beling, CD
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1996, 194 (02): : 547 - 562
  • [4] THERMAL ESCAPE OF CARRIERS OUT OF GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES
    GURIOLI, M
    MARTINEZPASTOR, J
    COLOCCI, M
    DEPARIS, C
    CHASTAINGT, B
    MASSIES, J
    PHYSICAL REVIEW B, 1992, 46 (11): : 6922 - 6927
  • [5] TUNNELING AND SUBBAND LEVELS IN GAAS QUANTUM-WELL WITH DIRECT AND INDIRECT ALXGA1-XAS BARRIERS
    SANKARAN, V
    SINGH, J
    APPLIED PHYSICS LETTERS, 1991, 59 (16) : 1963 - 1965
  • [6] Exciton Stark shift in graded GaAs/AlxGa1-xAs quantum wells
    Ferreira, EC
    da Costa, JAP
    Freire, JAK
    Freire, VN
    Farias, GA
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 220 - 221
  • [7] Magnetophotoluminescence measurement of the formation time of an exciton in AlxGa1-XAs/GaAs quantum-well structures
    Zhu, J. B.
    Jeon, H. I.
    Suh, E.-K.
    Lee, H. J.
    Physical Review B: Condensed Matter, 52 (23):
  • [8] DOPING DENSITY DEPENDENCE OF INTERSUBBAND TRANSITIONS IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES
    RAMSTEINER, M
    RALSTON, JD
    KOIDL, P
    DISCHLER, B
    BIEBL, H
    WAGNER, J
    ENNEN, H
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) : 3900 - 3903
  • [9] Magnetophotoluminescence measurement of the formation time of an exciton in AlxGa1-xAs/GaAs quantum-well structures
    Zhu, JB
    Jeon, HI
    Suh, EK
    Lee, HJ
    Hwang, YG
    PHYSICAL REVIEW B, 1995, 52 (23): : 16353 - 16356
  • [10] Interband transitions in AlxGa1-xAs/AlAs quantum-well structures
    Lee, ST
    Haetty, J
    Petrou, A
    Hawrylak, P
    Dutta, M
    Pamulapati, J
    Newman, PG
    TaysingLara, M
    PHYSICAL REVIEW B, 1996, 53 (19): : 12912 - 12916