NEW SEMICONDUCTOR SUPERLATTICE

被引：531

作者：

SAIHALASZ, GA ^{[1
]}

TSU, R ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 12期

关键词：

D O I：

10.1063/1.89273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：651 / 653

页数：3

共 21 条

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[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

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APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

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PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830

[7] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330

[8] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].

ESAKI, L ;

CHANG, LL .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498

[9] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J].

ESAKI, L ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (24) :1108-&

[10] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

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