EXCITONS, PHONONS, AND INTERFACES IN GAAS/ALAS QUANTUM-WELL STRUCTURES

被引：138
|
作者：
GAMMON, D
SHANABROOK, BV
KATZER, DS
机构：
[1] Naval Research Laboratory, Washington
来源：
PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 12期
关键词：
D O I：
10.1103/PhysRevLett.67.1547
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report photoluminescence and resonant-Raman-scattering studies of single GaAs/AlAs quantum-well structures. Splittings in the exciton peaks show that there is a large-scale island structure at the interfaces. Shifts in the absolute exciton energies of quantum wells grown at different substrate temperatures and also the form of the optical-phonon energies as a function of both mode index and quantum-well width indicate that there also exists a small-scale structure on the interfaces.
引用
收藏
页码：1547 / 1550
页数：4
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