BURIED GAINAS/INP LAYERS GROWN ON NONPLANAR SUBSTRATES BY ONE-STEP LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY

被引:39
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GALEUCHET, YD
ROENTGEN, P
GRAF, V
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10.1063/1.100180
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O59 [应用物理学];
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页码:2638 / 2640
页数:3
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