VACANCY-IMPURITY COMPLEXES AND POSITRON-ANNIHILATION

被引：4
|
作者：
TANIGAWA, S
NANAO, S
DOYAMA, M
KURIBAYASHI, K
机构：
来源：
SOLID STATE COMMUNICATIONS | 1972年 / 10卷 / 11期
关键词：
D O I：
10.1016/0038-1098(72)90888-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1025 / +
页数：1
相关论文
共 50 条
  • [1] STUDIES OF VACANCY-IMPURITY COMPLEXES BY MEANS OF POSITRON-ANNIHILATION
    DOYAMA, M
    KURIBAYA.K
    NANAO, S
    TANIGAWA, S
    ACTA CRYSTALLOGRAPHICA SECTION A, 1972, 28 : S156 - S156
  • [2] VACANCY-IMPURITY BINDING ENTHALPY IN NISB BY MEANS OF POSITRON-ANNIHILATION
    DLUBEK, G
    BRUMMER, O
    MEYENDORF, N
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (02): : K157 - K160
  • [3] VACANCY-IMPURITY INTERACTION IN DILUTE IRON-ALLOYS BY POSITRON-ANNIHILATION
    TRIFTSHAUSER, W
    MATTER, H
    WINTER, J
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (03): : 179 - 187
  • [4] POSITRON LIFETIME IN VACANCY-IMPURITY COMPLEXES
    CORBEL, C
    GUPTA, RP
    COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II, 1981, 293 (07): : 489 - 492
  • [5] POSITRON LIFETIME IN VACANCY-IMPURITY COMPLEXES
    CORBEL, C
    GUPTA, RP
    JOURNAL DE PHYSIQUE LETTRES, 1981, 42 (24): : L547 - L550
  • [6] VACANCY-IMPURITY BINDING-ENERGY IN ALUMINUM 1.7 AT PERCENT ZINC USING POSITRON-ANNIHILATION LIFETIMES
    SNEAD, CL
    HALL, TM
    GOLAND, AN
    PHYSICAL REVIEW LETTERS, 1972, 29 (01) : 62 - &
  • [7] STUDIES OF VACANCIES AND VACANCY-IMPURITY PAIRS IN CU-0.5 AT PERCENT GE BY MEANS OF POSITRON-ANNIHILATION
    DOYAMA, M
    KURIBAYASHI, K
    NANAO, S
    TANIGAWA, S
    APPLIED PHYSICS, 1974, 4 (02): : 153 - 156
  • [8] POSITRON-ANNIHILATION IN METAL-VACANCY-HYDROGEN COMPLEXES
    JENA, P
    PONNAMBALAM, MJ
    MANNINEN, M
    PHYSICAL REVIEW B, 1981, 24 (05): : 2884 - 2887
  • [9] POSITRON STATES AT VACANCY-IMPURITY PAIRS IN SEMICONDUCTORS
    MAKINEN, S
    PUSKA, MJ
    PHYSICAL REVIEW B, 1989, 40 (18): : 12523 - 12526
  • [10] POSITRON-ANNIHILATION AND VACANCY FORMATION IN AL
    HOOD, GM
    SCHULTZ, RJ
    JOURNAL OF PHYSICS F-METAL PHYSICS, 1980, 10 (04): : 545 - 548
12345