ULTRALOW THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL (AL,GA)AS LASERS

被引：12

作者：

DERRY, PL ^{[1
]}

CHEN, HZ ^{[1
]}

MORKOC, H ^{[1
]}

YARIV, A ^{[1
]}

LAU, KY ^{[1
]}

BARCHAIM, N ^{[1
]}

LEE, K ^{[1
]}

ROSENBERG, J ^{[1
]}

机构：

[1] ORTEL CORP,ALHAMBRA,CA 91803

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：689 / 691

页数：3

共 50 条

[1] ULTRALOW-THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM-WELL BURIED HETEROSTRUCTURE (AL,GA)AS LASERS WITH HIGH REFLECTIVITY COATINGS
DERRY, PL
YARIV, A
LAU, KY
BARCHAIM, N
LEE, K
ROSENBERG, J
APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1773 - 1775
[2] RECORD LOW-THRESHOLD, SINGLE-STRAINED-QUANTUM-WELL, GRADED-INDEX, SEPARATE-CONFINEMENT HETEROSTRUCTURE LASER
VAWTER, GA
MYERS, DR
BRENNAN, TM
HAMMONS, BE
HOHIMER, JP
ELECTRONICS LETTERS, 1989, 25 (03) : 243 - 244
[3] ANALYSIS AND OPTIMIZATION OF GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE WAVE-GUIDES FOR QUANTUM-WELL LASERS
ZOU, WX
CHUANG, ZM
LAW, KK
DAGLI, N
COLDREN, LA
MERZ, JL
JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 2857 - 2861
[4] ULTRALOW THRESHOLD, GRADED-INDEX WAVEGUIDE, SEPARATE CONFINEMENT, CW BURIED-HETEROSTRUCTURE LASERS
TSANG, WT
LOGAN, RA
DITZENBERGER, JA
ELECTRONICS LETTERS, 1982, 18 (19) : 845 - 847
[5] TEMPERATURE-DEPENDENCE OF OPTICAL GAIN, QUANTUM EFFICIENCY, AND THRESHOLD CURRENT IN GAAS/GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE SINGLE-QUANTUM-WELL LASERS
ZHU, LD
ZHENG, BZ
FEAK, GAB
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (09) : 2007 - 2012
[6] SOME CHARACTERISTICS OF THE GAAS GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER STRUCTURE
HERSEE, SD
DECREMOUX, B
DUCHEMIN, JP
APPLIED PHYSICS LETTERS, 1984, 44 (05) : 476 - 478
[7] HIGH-EFFICIENCY SINGLE QUANTUM WELL GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE LASERS FABRICATED WITH MEV OXYGEN ION-IMPLANTATION
XIONG, FL
TOMBRELLO, TA
WANG, H
CHEN, TR
CHEN, HZ
MORKOC, H
YARIV, A
APPLIED PHYSICS LETTERS, 1989, 54 (08) : 730 - 732
[8] VERY-LOW THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE STRAINED INGAASP SINGLE-QUANTUM-WELL LASERS
YAMAMOTO, N
YOKOYAMA, K
YAMANAKA, T
YAMAMOTO, M
ELECTRONICS LETTERS, 1994, 30 (03) : 243 - 244
[9] Regrowth and annealing of In0.22Ga0.78As and GaAs quantum well graded-index separate confinement heterostructure lasers
Wassermeier, M
Hey, R
Höricke, M
Wiebicke, E
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (08) : L40 - L43
[10] HIGH-POWER LOW-THRESHOLD GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE ALGAAS SINGLE QUANTUM WELL LASERS ON SI SUBSTRATES
KIM, JH
LANG, RJ
RADHAKRISHNAN, G
KATZ, J
NARAYANAN, AA
CRAIG, RR
APPLIED PHYSICS LETTERS, 1989, 55 (15) : 1492 - 1494

← 1 2 3 4 5 →