LOW-TEMPERATURE ION MIXING OF YTTRIUM AND SILICON

被引：5

作者：

ALFORD, TL ^{[1
]}

BORGESEN, P ^{[1
]}

MAYER, JW ^{[1
]}

LILIENFELD, DA ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.345678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ion mixing of yttrium and amorphous silicon bilayers was measured as a function of fluence and temperature using 600-keV Xe++ ions between 80 and 498 K. At 80 K the mixing rate was in excellent agreement with a theoretical model based on thermal spike mixing. For temperatures up to ≊372 K, the temperature-dependent contributions accounted for less than 50% of the overall mixing rate. For mixing at or above 400 K, our results revealed the formation of an ion-beam-induced orthorhombic Y-Si phase, which is not normally formed during thermal anneals of such bilayers.

引用

页码：1288 / 1292

页数：5

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