GAINASP/INP MULTIQUANTUM BARRIER (MQB) GROWN BY CHEMICAL BEAM EPITAXY (CBE)

被引：5
|
作者：
INABA, Y
UCHIDA, T
YOKOUCHI, N
MIYAMOTO, T
KOYAMA, F
IGA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 02期
关键词：
MULTIQUANTUM BARRIER (MQB); GAINASP/INP; N-I-N TUNNELING DIODE; CHEMICAL BEAM EPITAXY (CBE);
D O I：
10.1143/JJAP.32.760
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A multi-quantum barrier (MQB) using the GaInAsP/InP system has been demonstrated for the first time. n-i-n tunneling diodes consisting of MOB and bulk barriers were grown by chemical beam epitaxy (CBE). From the measurement of 77 K current-voltage characteristics, the effective potential barrier height of 1. 3 times the classical conduction band offset was obtained in the MQB structure.
引用
收藏
页码：760 / 761
页数：2
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