FUNDAMENTAL DEFECT CENTERS IN GLASS - PEROXY RADICAL IN IRRADIATED, HIGH-PURITY, FUSED-SILICA

被引：305

作者：

FRIEBELE, EJ ^{[1
]}

GRISCOM, DL ^{[1
]}

STAPELBROEK, M ^{[1
]}

WEEKS, RA ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37830

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.42.1346

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A new fundamental radiation-induced defect in high-purity synthetic silica has been identified by electron-spin-resonance studies of O17-enriched SiO2 as a peroxy radical O2- bonded to one Si in the glass matrix. The precursors of these defects are envisioned to be Si-O-O-Si structures, some of which preexist in the silica, are formed in greater numbers during neutron bombardment, and which may release an electron either during irradiation or subsequent annealing. © 1979 The American Physical Society.

引用

页码：1346 / 1349

页数：4

共 21 条

[1]

Adamic K., 1970, Journal of the American Chemical Society, V92, P922, DOI 10.1021/ja00707a031

[2]

[Anonymous], PROC INT TOPICAL CON

[3]

AUSSENEGG FR, UNPUBLISHED

[4] NEUTRON-IRRADIATION EFFECTS AND STRUCTURE OF NONCRYSTALLINE SIO2 [J].