STUDIES OF IONIZING-RADIATION EFFECTS ON SILICON DRIFT DETECTORS

被引：8
|
作者：
PANDEY, SU
VILKELIS, G
HUMANIC, TJ
KRANER, H
BELLWIED, R
FRENCH, A
HALL, J
机构：
[1] BROOKHAVEN NATL LAB,UPTON,NY 11973
[2] WAYNE STATE UNIV,DETROIT,MI 48201
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 361卷 / 03期
关键词：
D O I：
10.1016/0168-9002(95)00196-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A 45 x 45 mm rectangular silicon drift detector (SDD) was irradiated using a Co-60 gamma-source and its performance was studied. The total integrated dosage was 9 krad which is equivalent to the ionizing radiation dosage that the STAR SVT inner barrel detectors are expected to receive during 10 years of running at the soon to be built RHIC collider. The detector's performance after a high temperature annealing was also studied. The detector was found to be sufficiently radiation hard for RHIC applications.
引用
收藏
页码：457 / 460
页数：4
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