TRENDS IN DEFECT-CONTROLLED ELECTRONIC-PROPERTIES OF GROUP-V AMORPHOUS-SEMICONDUCTORS

被引：8

|

作者：

ELLIOT, SR

DAVIS, EA

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90306-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：849 / 854

页数：6

相关论文

共 43 条

[1] DEFECT STATES IN GROUP-V AMORPHOUS-SEMICONDUCTORS
ELLIOTT, SR
DAVIS, EA
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (13): : 2577 - 2587
[2] REVIEW OF GROUP-V AMORPHOUS-SEMICONDUCTORS
DAVIS, EA
JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 855 - 864
[3] THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
MORGAN, GJ
BURR, JN
BRUCE, NA
HICKEY, BJ
HOLENDER, JM
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 149 - 152
[4] ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS - AN INTRODUCTION
SCHIFF, EA
DISORDERED SOLIDS: STRUCTURES AND PROCESSES, 1989, 46 : 153 - 194
[5] LOCALIZATION AND ELECTRONIC-PROPERTIES IN AMORPHOUS-SEMICONDUCTORS
MORT, J
KNIGHTS, J
NATURE, 1981, 290 (5808) : 659 - 663
[6] CALCULATING THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
HAYES, TM
BEEBY, JL
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 55 - 56
[7] NEW MODEL FOR THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
JOHNSTON, R
KRAMER, B
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 59 - 62
[8] ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS - TOPOLOGY LATTICE EFFECTS
LATGE, A
MAKLER, SS
ANDA, EV
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 51 - 54
[9] ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS - LATTICE TOPOLOGY EFFECTS
LATGE, A
MAKLER, SS
ANDA, EV
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1987, 141 (01): : 163 - 171
[10] VIBRATIONAL EXCITATIONS OF DEFECT SITES IN AMORPHOUS GROUP-V SEMICONDUCTORS
POLLARD, WB
JOANNOPOULOS, JD
PHYSICAL REVIEW B, 1980, 21 (02): : 760 - 766

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