COMPARISON OF STRUCTURES OF SURFACES PREPARED IN HIGH VACUUM BY CLEAVING AND BY ION BOMBARDMENT AND ANNEALING

被引:40
作者
HANEMAN, D
机构
来源
PHYSICAL REVIEW | 1960年 / 119卷 / 02期
关键词
D O I
10.1103/PhysRev.119.563
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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页码:563 / 566
页数:4
相关论文
共 7 条
[1]   APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161
[2]   ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :252-253
[3]   POINT CONTACT TRANSISTOR STUDIES USING RADIOACTIVE COLLECTORS [J].
HANEMAN, D ;
MORTLOCK, AJ .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (01) :145-147
[5]  
HANEMAN D, 1960, PHYS REV, V118, P567
[6]  
HANEMAN D, UNPUB 2ND P C SEM SU
[7]   STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].
SCHLIER, RE ;
FARNSWORTH, HE .
JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :917-926