LOW-TEMPERATURE GROWTH OF GEXSI1-X/SI HETEROSTRUCTURES ON SI(100) BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

Low-temperature growth processes are needed in order to fully exploit the potential of Ge(x)Si1-x/Si heterostructures. Remote plasma-enhanced chemical vapor deposition has been successful for silicon homoepitaxy at substrate temperatures as low as 150-degrees-C. We report the growth of Ge(x)Si1-x/Si heterostructures with values of x between 0.07 and 0.73, and at substrate temperatures of 305 and 450-degrees-C. The films grown at 450-degrees-C have excellent crystallinity, low defect densities, and very abrupt interfaces, while films grown at 305-degrees-C have degraded crystallinity.