IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN P-TYPE SILICON

被引：4
|
作者：
FANG, PH
TARKO, H
DREVINSK.PJ
ILES, P
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 10期
关键词：
D O I：
10.1063/1.1653256
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：426 / &
相关论文
共 50 条
  • [1] IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN SILICON
    FANG, PH
    ILES, P
    APPLIED PHYSICS LETTERS, 1969, 14 (04) : 131 - +
  • [2] ANNEALING OF RADIATION DEFECTS IN P-TYPE GASB
    ABRIKOSOV, NK
    KOLOKOLTSEV, VN
    SKUDNOVA, EV
    INORGANIC MATERIALS, 1976, 12 (06) : 853 - 855
  • [3] RADIATION INDUCED DEFECTS IN P-TYPE SILICON
    HIRATA, M
    FANG, PH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 397 - &
  • [4] Isochronal annealing of radiation defects in p-type silicon during irradiating with 8 MeV electrons
    Basheleishvili, ZB
    Pagava, TA
    Eterashvili, TV
    SIXTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING, 2003, 5127 : 132 - 135
  • [5] Radiation-induced defects in p-type silicon carbide
    Kanazawa, S.
    Okada, M.
    Nozaki, T.
    Shin, K.
    Ishihara, S.
    Kimura, I.
    Materials Science Forum, 2002, 389-393 (01) : 521 - 524
  • [6] PASSIVATION OF IMPURITIES AND RADIATION DEFECTS BY HYDROGEN IN P-TYPE SILICON
    MUKASHEV, BN
    TOKMOLDIN, SZ
    TAMENDAROV, MF
    ABDULLIN, KA
    CHIKHRAI, EV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 643 - 646
  • [7] Radiation-induced defects in p-type silicon carbide
    Kanazawa, S
    Okada, M
    Nozaki, T
    Shin, K
    Ishihara, S
    Kimura, I
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 521 - 524
  • [8] KINETICS OF ANNEALING OF RADIATION DEFECTS IN P-TYPE SILICON AT TEMPERATURES OF 150-300-DEGREES-K
    MUKASHEV, BN
    KOLODIN, LG
    NUSUPOV, KK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (06): : 697 - 699
  • [9] ANNEALING OF RADIATION-INDUCED DEFECTS IN P-TYPE GERMANIUM SAMPLES
    BASMAN, AR
    GERASIMOV, AB
    DOLIDZE, ND
    KAKHIDZE, NG
    KONOVALENKO, BM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1222 - 1223
  • [10] The effects of annealing of a p-type photoluminescent porous silicon in vacuum
    Shin, HJ
    Lee, MK
    Hwang, CC
    Kim, KJ
    Kang, TH
    Kim, B
    Kim, GB
    Hong, CK
    Lee, KW
    Kim, YY
    SURFACE REVIEW AND LETTERS, 2002, 9 (01) : 261 - 265
12345