CARRIER LIFETIMES IN MBE AND MOCVD INGAAS QUANTUM-WELLS

被引：26
|
作者：
EHRLICH, JE
NEILSON, DT
WALKER, AC
KENNEDY, GT
GRANT, RS
SIBBETT, W
HOPKINSON, M
机构：
[1] UNIV ST ANDREWS,DEPT PHYS & ASTRON,ST ANDREWS KY16 9SS,SCOTLAND
[2] UNIV SHEFFIELD,SERC III-V SEMICOND FAC,SHEFFIELD S14 4DU,ENGLAND
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 02期
关键词：
D O I：
10.1088/0268-1242/8/2/025
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements have been made of the carrier lifetimes in MOCVD and MBE InGaAs quantum wells in a waveguide configuration using a CW probe and a picosecond pump at a wavelength of 1.5 mum. Values in the range 4-7 ns were obtained for excitation densities of the order of 3-6 x 10(17) cm-3.
引用
收藏
页码：307 / 309
页数：3
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